There will always be use for large internal storage space - as media files increase in size because of the proliferation of 4K content, and as data connection speeds get better so that you can now download files with larger sizes. Android benefits from the ability to install an external memory card in most devices to provide additional storage but that could be a thing of the past thanks to the internal storage capacity in Samsungs new chip hitting 512GB.
With Samsung's new 512GB eUFS storage, the South Korean company will soon be able to manufacture smartphones or tablets that have built-in flash storage that's the same as or even more than some desktop or laptop computers. Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for U.S. variants). Nothing is impossible these days.
With 512GB of eUFS storage, Samsung says that a flagship smartphone would be able to store approximately 130 4K Ultra HD (3,840 x 2,160) video clips of a 10 minute duration.
The new 512GB UFS device consists of eight 64-layer 512-gigabit V-NAND chips stacked together with a controller chip.
The Samsung 512GB eUFS also features strong read and write performance. The 512 GB chip stacks eight of the aforementioned NAND dies and is speced for up to 860 MB/s sequential read speeds as well as up to 255 MB/s sequential write speeds, which is in line with the company's 256 GB eUFS device launched in 2016. No, not really. That's why Samsung says it is going to steadily increase its production volume for both 512 GB and 256 GB V-NAND chips. Still, we do know Samsung has a habit of using a bunch of similar specs on these two classes and we don't expect anything different come 2018. According to the company, this is expected to meet the increase in demand for embedded mobile storage, SSDs, and removable memory cards with high density and performance.
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